Silicon Carbide(SiC) Sputtering Target
Release Date£º[2012-7-18 17:13:35]    Total access[1286]Times
 
Silicon Carbide (SiC) is highly wear resistant and also has good mechanical properties, including high temperature strength and thermal shock resistance. silicon carbide, as a technical ceramic, is produced in two main ways. Reaction bonded SiC is made by infiltrating compacts made of mixtures of SiC and Carbon with liquid Silicon. The Silicon reacts with the Carbon forming silicon carbide. The reaction product bonds the silicon carbide particles. Sintered SiC is produced from pure SiC powder with non-oxide sintering aids. Conventional ceramic forming processes are used and the material is sintered in an inert atmosphere at temperatures up to 2000°C or higher.
Silicon carbide maintains its high mechanical strength in temperatures as high as 1,400˚C. It has higher chemical corrosion resistance than other ceramics.
We offer the following finishing services to ensure their silicon carbide components meet  the exacting requirements of their customers:
•         High tolerance machining,
•         Grinding and polishing of machining services including:
•         Precision grinding and machining
•         CNC machining and grinding
•         Lapping and polishing
•         Threading
Typical Applications of Silicon Carbide
Typical applications of silicon carbide include:
•         Sputtering Targets
•         Fixed and moving turbine components
•         Seals, sliding bearings, pump vanes
•         Ball valve parts
•         Wear plates parts (thread guides)
•         Kiln furniture
•         Heat exchangers
•         Semiconductor wafer processing equipment
•         Semiconductor handling parts
 

 


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